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| HiPerFASTTM IGBT IXGH20N30 VCES IC25 VCE(sat)typ tfi(typ) = 300 V = 40 A = 1.45 V = 180 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 300 300 20 30 40 20 80 ICM = 40 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C TO-247 AD G C C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features * International standard package JEDEC TO-247 AD * High current handling capability * Newest generation HDMOSTM process * MOS Gate turn-on - drive simplicity Applications * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD 6 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2.5 TJ = 25C TJ = 125C V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 250 mA, VCE = VGE 5 200 1 100 1.45 1.6 Advantages * High power density * Suitable for surface mounting * Switching speed for high frequency applications * Easy to mount with 1 screw, (isolated mounting screw hole) VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 97527A (7/00) (c) 2000 IXYS All rights reserved 1-2 IXGH20N30 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 18 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 130 40 90 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 15 35 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 15 30 100 180 0.6 15 30 0.3 250 300 1.0 420 450 1.6 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXGH) Outline gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % 1.5 2.49 0.83 K/W 0.25 K/W (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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